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| TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 12 6 24 1.1 W 0.75 Unit V V V A JEDEC JEITA TOSHIBA 2-3R1E Drain power dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.035 g (typ.) 0.6 W 0.35 Circuit Configuration 8 7 6 5 46.8 6 0.075 150 -55~150 mJ A mJ C C 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-02-20 TPCS8211 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 114 C/W 167 Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 208 C/W 357 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Marking (Note 6) Type S8211 Lot No. Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 25.4 0.8 (Unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4 0.8 (Unit: mm) (a) (b) Note 3: a) b) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = 16 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 W, IAR = 6 A Note 5: Repetitive rating; pulse width limited by max channel temperature. Note 6: on lower right of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-02-20 TPCS8211 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = 10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 mA VGS = 2.0 V, ID = 4.2 A Drain-source ON resistance RDS (ON) VGS = 2.5 V, ID = 4.2 A VGS = 4.0 V, ID = 4.8 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd VDD ~ 16 V, VGS = 5 V, ID = 6 A |Yfs| Ciss Crss Coss tr ton 5V VGS 0V 4.7 W ID = 3 A RL = 3.3 W VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 3.0 A Min 3/4 3/4 20 8 0.5 3/4 3/4 3/4 5.5 3/4 3/4 3/4 3/4 VOUT 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 26 21 16 11 1590 180 200 6.4 22 10 42 20 3.5 4.5 Max 10 10 3/4 3/4 1.2 45 29 24 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF S mW Unit mA mA V V Duty < 1%, tw = 10 ms = VDD ~ 10 V - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition 3/4 IDR = 6 A, VGS = 0 V Min 3/4 3/4 Typ. 3/4 3/4 Max 24 -1.2 Unit A V 3 2003-02-20 TPCS8211 ID - VDS 5 4, 5 2 1.7 Common source Ta = 25C Pulse test 10 4, 5 2 1.8 ID - VDS Common source Ta = 25C Pulse test 4 8 (A) ID 3 ID (A) 1.6 6 1.7 Drain current 2 1.5 1 VGS = 1.4 V 0 0 Drain current 4 1.6 2 1.5 VGS = 1.4 V 0.4 0.8 1.2 1.6 2.0 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 10 Common source VDS = 10 V Pulse test 0.8 VDS - VGS Common source Ta = 25C Pulse test 0.6 8 (A) ID 6 Drain-source voltage Drain current VDS 0.4 1.5 0.2 6 0 0 3 ID = 12 A 100 25 Ta = -55C 1 2 3 4 5 4 2 0 0 (V) 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 100 RDS (ON) - ID (S) iYfsi 25 2.5 Drain-source ON resistance RDS (ON) (mW) 2 Forward transfer admittance Ta = -55C 100 10 VGS = 4 V 10 Common source VDS = 10 V Pulse test 1 0.1 1 10 1 0.1 1 Common source Ta = 25C Pulse test 10 Drain current ID (A) Drain current ID (A) 4 2003-02-20 TPCS8211 RDS (ON) - Ta 60 Common source Pulse test 10 10 5 3 5 IDR - VDS Drain-source ON resistance RDS (ON) (mW) Drain reverse current IDR (A) 50 1 0 VGS = -1 V 40 VGS = 2 V 30 3 20 VGS = 2.5 V VGS = 4 V Common source Ta = 25C Pulse test 1 0 10 ID = 1.5, 3, 6 A 0 -80 -40 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 1.6 Vth - Ta Common source VDS = 10 V ID = 200 mA Pulse test Ciss Gate threshold voltage Vth (V) 1.2 (pF) Capacitance C 1000 0.8 Coss 100 Crss Common source Ta = 25C VGS = 0 V f = 1 MHz 1 10 100 0.4 0 -80 -40 0 40 80 120 160 10 0.1 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 1.2 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) Dynamic input/output characteristics 20 Common source ID = 6 A Ta = 25C Pulse test 10 (W) (V) 16 VDS 8 PD VDS 0.8 (2) (3) Drain power dissipation Drain-source voltage t = 10 s 0.6 8 VGS 4 0.4 (4) 0.2 4 2 0 0 50 100 150 200 0 0 8 16 24 0 32 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2003-02-20 Gate-source voltage 12 VDD = 16 V 6 VGS (V) 1 TPCS8211 rth - tw 1000 Device mounted on a glass-epoxy board (a) (Note 2a) 500 Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) (4) (3) (2) (1) Normalized transient thermal impedance rth (C/W) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area 100 50 30 ID max (pulse) * 10 Single-device value at dual operation (Note 3b) 1 ms * 10 ms * (A) Drain current ID 5 3 1 0.5 0.3 0.1 0.05 * Single pulse Ta = 25C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.01 0.03 0.1 0.3 1 VDSS max 3 10 30 100 Drain-source voltage VDS (V) 6 2003-02-20 TPCS8211 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2003-02-20 |
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